B11G2327N71DYZ RF MOSFET LDMOS
أحصل على آخر سعر| أدني كمية الطلب: | 1 |
نموذج: B11G2327N71D B11G2327N71DYZ B11G2327N71DXZ
علامة تجارية: امبليون
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| Parameter | Specification |
|---|---|
| Frequency Range | 2300 MHz to 2700 MHz (2.3–2.7 GHz) |
| Peak Output Power (3dB Compression) | 48.0–49.5 dBm (approximately 63–89 W), typical 49 dBm (approximately 79.4 W) |
| Linear Output Power (PL=5W/37dBm) | Power Gain: 27.5–33.5 dB, typical 30.0 dB |
| Drain Efficiency (PL=5W/37dBm) | 16–22 %, typical 19 % |
| Drain Efficiency (3dB Compression) | 46–54 %, typical 50 % |
| Supply Voltage (VDS) | 28 V (Standard) / 65 V (Maximum Rating) |
| Quiescent Current (IDq) | Carrier Path: 200 mA; Peaking Path: 100 mA (Typical) |
| Package | 36-PQFN (12×7 mm), Leadless Plastic Package with Exposed Pad (Enhanced Thermal Dissipation) |
| Internal Structure | Dual-path 2-stage fully integrated design, including carrier and peaking devices, input splitter, output combiner, and pre-match network |
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