مضخم طاقة الترددات اللاسلكية B10G3336N16DL
أحصل على آخر سعر| أدني كمية الطلب: | 1 |
نموذج: B10G3336N16DL
علامة تجارية: امبليون
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| Parameter | Specification |
|---|---|
| Frequency Range | 3300 MHz ~ 3600 MHz (Precisely covers 5G NR n77/n78 high-frequency core bands) |
| Peak Output Power | 16W Continuous Wave (CW), in Doherty Configuration (42.5dBm typical, up to 43dBm at 28V supply) |
| Typical Power Gain | 35 dB (at 28V supply, 33dBm average output power, 3450MHz) |
| Typical Drain Efficiency | 35% (at 10dB OBO, 1-carrier W-CDMA signal, PAR=9.9dB, 3450MHz) |
| Supply Voltage | 26V/28V nominal, Maximum Rated Drain-Source Breakdown Voltage 65V |
| Quiescent Current | 30 mA (carrier path), independent biasing for peaking path (VGSq(peak)=VGSq(carrier)-0.4V) |
| Package Type | LGA-7x7-20-2, 7x7mm leadless thermal enhanced package with exposed thermal pad |
| Port Characteristics | Internally matched to 50Ω input/output, no external matching required, simplifying RF PCB design |
| Architecture | 3-stage fully integrated Doherty with built-in input splitter, output combiner, carrier/peaking amplifier paths and driver stages |
| Operating Temperature | -40°C ~ +125°C (Maximum Junction Temperature 175°C) |
| Thermal Resistance | Junction-to-case thermal resistance as low as 7.9 K/W (at PL=1.585W, 1-carrier W-CDMA signal) |
| Load Mismatch Tolerance | Capable of withstanding VSWR=10:1 through all phases (at 32V supply, 3600MHz), improving system robustness |
| Gain Flatness | Only 0.5dB within 3300-3600MHz band, suitable for ultra-broadband communication systems |
| ESD Protection | CDM Class C1 (250V), HBM Class 1B (500V), enhancing device reliability |
| Stability | Rollett stability factor K>1 (at -40°C, 0.6GHz to 8.1GHz frequency range), ensuring stable operation across the entire band |
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